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Leping Li, Ph.D.
Visiting Professor of Chemistry
(860) 685-2713
lli@wesleyan.edu
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This site is underconstruction.
Physical Chemistry: Research areas include
Selected Publications
1. “Pressure Narrowing of ac Stark-Broadened Multiphoton
Spectra,” Leping Li, R. N. Porter, and P. M. Johnson, Phys. Rev. Lett. 53, 1336
(1984).
2. “Pressure Effects in the Multiphoton Ionization of Atoms and
Molecules”, P.M. Johnson, Leping Li, and R.N. Porter, in Multiphoton
Processes, P. Lambropoulos and S. Smith, eds. (Springer-Verlag, Berlin,
1984), pp. 99 - 109.
3. “AC Stark-effect Lineshapes in Multiphoton Ionization Spectra,” Leping
Li, B. X. Yang, and P. M. Johnson, J. Opt. Soc. Amer. B 2 748 (1985).
4. “Pressure Narrowing of ac Stark-Broadened Multiphoton Spectra,” Leping
Li, R. N. Porter, and P. M. Johnson, Phys. Rev. Lett. 54, 367 (1985).
5. “Third Harmonic Interference Effects in the MPI Spectrum of Acetylene,”
T.M. Orlando, Leping Li, S.L. Anderson, and M.G. White, Chem. Phys. Lett. 129,
31 (1986).
6. “Dynamics and Spectroscopic Manifestations of Two-Photon Bound-Bound
Absorption Through a Repulsive Intermediate State,” Leping Li, R.J. Lipert, H.
Park, W.A. Chupka, and S.D. Colson, J. Chem. Phys. 87, 6767 (1987).
7. “Photo-dissociation, Third Harmonic Interference and Laser Polarization
Effect in Multiphoton Ionization Spectrum of Chlorine Molecules,” Leping Li, M.
Wu, and P.M. Johnson, J. Chem. Phys. 86, 1131 (1987).
8. “Collisional Effect in MPI Spectrum of Nitric Oxide,” Leping Li and
P.M. Johnson, Phys. Rev. A 37, 3801 (1988).
9. “Adiabatic dissociation of photo-excited chlorine molecules” Leping Li,
R.J. Lipert, J. LoBue, W.A. Chupka, and S.D. Colson, Chem. Phys. Lett. 151, 335
(1988).
10.“One- and two- color multiphoton ionization of argon,” Leping Li, M.
Wu and P.M. Johnson, J. Chem. Phys. 89, 3470 (1988).
11.“Shape-resonance and non-Franck-Condon behavior in the photoelectron
spectra of O2 produced by 2+1 MPI via 3ss Rydberg states,” P.J. Miller, Leping Li, W.A. Chupka and S.D. Colson, J. Chem.
Phys. 89, 3921 (1988).
12.“Observation of Strong Rydberg-Valence Mixing in the EPm
-State of O2 by 3+1 MPI Photoelectron Spectroscopy,” P.J. Miller, Leping Li,
W.A. Chupka and S.D. Colson, J. Chem. Phys. 88, 2972 (1988).
13.“Spectroscopy and Photophysics of 1Pg
and 3Pg
Rydberg-Ion-Pair States of Cl2 revealed by multiphoton Ionization,” Leping Li,
R.J. Lipert, H. Park, W.A. Chupka and S.D. Colson, J. Chem. Phys. 88, 4608
(1988).
14.“Observation and Analysis of the 3dp1åg+
Rydberg State of O2 by (2+1) Multiphoton Ionization,” H. Park, Leping Li and
W.A. Chupka, Chem. Phys. Lett. 162, 317 (1989).
15.“Multiphoton ionization studies of NO: spontaneous decay channels in
4ppk2P(v=2)
Rydberg state,” R.J. Miller, Leping Li, Y. Wang, W.A. Chupka and S.D. Chupka, J.
Chem. Phys. 90, 754 (1989).
16.“Anomalous line shapes in delayed optical-optical double resonance
studies of N2,” Leping Li, W.A. Chupka and S.T. Pratt, J. Chem. Phys. 90, 606
(1989).
17.“Two-photon spectroscopy of the 3d Rydberg states of O2: 1Fg
and 3Fg states,” H.
Park, Leping Li and W.A. Chupka, J. Chem. Phys. 92, 5835 (1990).
18.“Identification of the 3dp1∆g
Rydberg state of O2 by multiphoton ionization and polarization studies,” H.
Park, Leping Li and W.A. Chupka, J. Chem. Phys. 92, 61 (1990).
19.“Rotationally resolved photo-fragmentation spectroscopy of CH+ formed
by resonance-enhanced multiphoton ionization,” Y. Wang, Leping Li and W.A.
Chupka, Chem. Phys. Lett. 185, 478 (1991).
20.“Rectification of scanning tunneling microscope current to a surface
covered with molecules,” M. Pomerantz, A. Aviram, R.A. McCorkle, Leping Li and
A.G. Schrott, IBM Res. Rep. 14, RC-17160 (1991).
21.“An isotope approach to characterization of microwave water plasma
modified polyamide surfaces,” N.J. Chou, A.D. Marwick, R.D. Goldblatt, Leping
Li, G. Coleman, J.E. Heindenreich and J.R. Paraszczak, IBM Res. Rep. 12,
RC-17060 (1991).
22.“Characterization of hydrogen passivated silicon surfaces for low
temperature epitaxy,” S. Cohen, C. D’Emic, J. Blum, M. D’Agostino, F. Cardone,
Leping Li, M. Liehr, R. Baseman and L. Rothman, Technical proceedings of the
research silicon technology and circuits symposium, ASTL, East Fishkill, NY,
Nov. 1991.
23.“Desorption of hydrogen from Si(100)2x1 at low coverage: The influence
of p-bonded dimmers on
the kinetics,” U. Hoefer, Leping Li and T.F. Heinz, Phys. Rev. B 45, 9485-88
(1992). [This work has been cited more than 200 times according to SCI.]
24.“Rectification of STM current to graphite covered with phthalocyanine
molecules,” M. Pomerantz, A. Aviram, R.A. McCorkle, Leping Li, and A.G. Schrott,
Science 255, 1115-1118 (1992).
25.“An isotope approach to characterization of microwave water plasma
modified polyimide surfaces”, N.J. Chou, A.D. Marwich, R.D. Goldblatt, Leping
Li, G. Coleman, J.E. Heidenreich, J. Vac. Sci. Technol. A10, 248 (1992).
26.“Nonlinear optical studies of hydrogen desorption and diffusion on
silicon surfaces,” U. Hofer, Leping Li, G.A. Reider and T.F. Heinz, Quantum
Electronics and Laser Science Conference, OSA Tech. Dig. 12, 298 – 300 (1992).
27.“Nonlinear optical studies of Desorption and diffusion on silicon
surfaces,” G.A. Reider, U. Hofer, Leping Li and T.F. Heinz, Proceedings of the
International Conference on Advanced Laser Technologies (Moscow, Russia, Sept.
1992).
28.“Temperature dependence of second-harmonic generation from silicon
surfaces,” U. Hofer, Leping Li and T.F. Heinz, Proceedings of the International
Conference on Laser Science, ILS ’92 (Albuquerque, NM, Sept. 1992), Bull. Am.
Phys. Soc. 37, 1224 (1992).
29.“Nonlinear optical studies of adsorbates on silicon surfaces,” U.
Hofer, T.F. Heinz, Leping Li and G.A. Reider, Optical Society of America Annual
Meeting (Albuquerque, NM, Sept. 1992), OSA Tech. Dig. 23, 90 (1992).
30.(2+1) Resonance-enhanced multiphoton ionization studies of the CH D2P(v=2)
state,” Y. Wang, Leping Li, W.A. Chupka, Chem. Phys. Lett. 192, 348 (1992).
31.“Temperature dependence of second-harmonic generation from silicon
surfaces,” U. Hofer, Leping Li, E.H. Ratzlaff and T.F. Heinz, Proceeding of the
13th European Conference on Surface Science, ECOSS – 13 (Warwick, England,
1993), Europhysics Conf. 17E, WeA-C6 (1993).
32.“Dynamics of hydrogen Desorption and diffusion on silicon surfaces,”
T.F. Heinz, U. Hofer, Leping Li and G.A. Reider, American Chemical Society
National Meeting (Denver, CO, USA, Feb. 1993), ACS 205, 26 (1993).
33.“Noncontact impedance method for end point detection in wet etching,”
Eugene H. Ratzlaff, Leping Li, Tony Heinz, and Steven G. Barbee, Technical
Proceedings of the Research Silicon Technology and Circuits Symposium, ASTL,
East Fishkill, NY, March 1993.
34.“Real-time, in-situ monitoring of wet etching of product wafers,” L.
Li, E. H. Ratzlaff, S. G. Barbee, T.F. Heinz, M. Datta, Y. Hsiao, D.E. Kotecki,
J.J. McDonough, S.N. Mei, J.F. Roeder, R.V. Shenoy, K.D. Vinal and J.W. Wong,
Technical Proceedings of the Research Silicon Technology and Circuits Symposium,
ASTL, East Fishkill, NY, March 1993.
35.“Optical study of disordering of Si(111)7x7 and Si(100)2x1 surfaces,”
U. Hofer, Leping Li and T.F. Heinz, March Meeting of the American Physical
Society (Pittsburgh, March 1994), Bull. Am. Phys. Soc. 39, 195 (1994).
36.“Nonlinear optical studies of the Si(111) 7x7 to 1x1 phase transition:
superheating and the nature of the 1x1 phase,” U. Hoefer, Leping Li, G. Ratzlaff
and T.F. Heinz, Phys. Rev. B, 52, 5264-68 (1995).
37. “A new endpoint detect system for tungsten chem-mech polishing,” A.
McGuire, Leping Li, Steven Barbee, A. Halperin, R. Nadeau and F. Kazak,
Proceedings of the 6th International Conference on Chemical Mechanical
Polishing, Burlington VT, May, 1995.
38. “A simple and specific method of attaching molecules to graphite,” A.
Aviram, L. Li, M. Pomerantz, P. Roland and A. Schrott, Langmuir, 2049 – 2053 (1995).
39. “Physisorbed template for spatial patterning of adsorbates,” P.A.
Williams, G.A. Reider, Leping Li, U.Hoefer, T. Suzuki, T.F. Heinz, Phys. Rev.
Lett., 3459-3462 (1997).
40. “Endpoint Detection in Oxide/Nitride Chemical Mechanical Polishing”,
Leping Li, Cong Wei, Jim Gilhooly, Clifford III. Morgan, Proceedings of CMP
World, Nov. 1999.
41.“Real-time, in-situ monitoring and closed loop control of metal and
oxide CMP processes”, L. Li, C. Wei, and S. Barbee, Proceedings of AVS 1st
International Conference on Microelectronics and Interfaces, Feb. 2000.
42.“A chemical-based CMP endpoint technology,” L. Li, C. Wei, C. Wang, Y.
Gu, S. Barbee, J. Gilhooly, C. Morgan, W. Moser, H. Stunz, W. Imfeld, A.
Siegrist and M. Kutter, Proceedings of AVS 3rd International Conference on
Microelectronics and Interfaces, Feb. 2002.
Patents
“Interferometer for in-situ measurement of thin film thickness changes,”
US 5,220,405 (06/15/1993); JP5248817-A (09/28/1993)
“Contactless real-time in-situ monitoring of a chemical etching process,”
US 5,338,390 (08/16/1994)
“Method and apparatus for real-time film surface detection for large area
wafers,” US 5,381,234 (01/10/1995)
“In-situ, non-destructive CVD surface monitor,” US 5,386,121
(01/31/1995)
“Method and apparatus for real-time, in-situ endpoint detection and closed
loop etch process control,” US 5,392,124 (02/21/1995); EP 658758-A;
EP 658758-A1 (06/21/1995); JP 7201807-A (08/04/1995)
“Method and apparatus for contactless real-time in-situ monitoring of a
chemical etching process,” US 5,445,705 (08/29/1995); JP 8017790-A
(01/19/1996); JP 3188822-B2
“Fixture for in-situ non contact monitoring of wet chemical etching with
passive wafer restraint,” US 5,541,289 (09/19/1995)
“Method and apparatus for contactless real-time in-situ monitoring of a
chemical etching process,” US 5,456,788 (10/10/1995)
“Method for contactless real-time, in-situ monitoring of a chemical etching
process,” US 5,480,511 (01/02/1996); EP 690489-A; TW 260821-A
(10/21/1995); EP 690489-A2 (01/03/1996); JP 8031904-A
(02/02/1996); US 5573623-A (11/12/1996)
“Measuring film etching uniformity during a chemical etching process,”
US 5,489,361 (02/06/1996)
“Real time measurement of etch rate during a chemical etching process,”
US 5,500,073 (03/19/1996); EP 690488-A ; EP 690488-A2
(01/03/1996); JP 8017791-A (01/19/1996); US 5582746-A
(12/10/1996); TW 293148-A (12/11/1996); US 5788801-A
(08/04/1998); JP 3149334-B2 (03/26/2001)
“Minimizing over-etch during a chemical etching process,”; US 5,501,766
(03/26/1996)
“Contactless real-time, in-situ monitoring of a chemical etching process,”
US 5,516,399 (05/14/1996); EP 691538-A; EP 691538-A2
(01/10/1996); JP 8051096-A (02/20/1996); TW 342522-A
(10/11/1998); JP 3145609-B2 (03/12/2001)
“In-situ monitoring of the change in thickness of films,” US 5,559,428-A
(09/24/1996); JP 08285514-A2 (11/01/1996); KR 209042-B1
(07/15/1999)
“Apparatus for contactless real-time in-situ monitoring of a chemical
etching process,” US 5,573,623 (11/12/1996)
“Chemical etch monitor for measuring film etching uniformity during a
chemical etching process,” US 5,573,624 (11/12/1996)
“Real time measurement of etch rate during a chemical etching process,”
US 5,582,746 (12/10/1996)
“Endpoint detection for chemical mechanical polishing using frequency or
amplitude mode,” US 5,644,221 (07/01/1997); EP 800896-A; EP
800896-A2 (10/15/1997); JP 9330893-A (12/22/1997); EP 800896-A3;
JP 3180051-B2 (06/25/2001); EP 800896-B1 (12/19/2001); DE
69709214-E (01/31/2002)
“Chemical mechanical polishing endpoint process control,” US 5,659,492
(08/19/1997)
“In-situ monitoring of the change in thickness of films,” US 5,660,672-A
(08/26/1997); JP 8285515-A (11/01/1996); KR 221514-B1
(09/15/1999); JP 3290347-B2 (06/10/2002)
“Rotary signal coupling for chemical mechanical polishing endpoint
detection with a Westech tool,” US 5,663,637 (09/02/1997)
“In-situ monitoring of the change in thickness of films,” US 5,731,697-A
(03/24/1998); JP 02878178-B2 (04/05/1999); KR 0221514-B1
(09/15/1999); JP 03290347-B2 (06/10/2002)
“Rotary signal coupling for chemical mechanical polishing endpoint
detection with a strasbaugh tool,” US 5,770,948 (06/23/1998)
“Real time measurement of etch rate during a chemical etching process,”
US 5,788,801 (08/04/1998)
“Probe for slurry gas sampling,” US 6,021,679 (02/08/2000)
“Indirect endpoint detection by chemical reaction,” US 6,066,564-A
(05/23/2000); US 6180422-B2; JP 2000031102-A (01/28/2000); KR
99088021-A (12/27/1999); US 6180422-B1 (01/30/2001); US
6194230-B1 (02/27/2001); US 6228280-B1 (05/08/2001); US
6228769-B1 (05/08/2001); KR 2001092460-A (10/25/2001); KR
2001092461-A; US 6419785-B1 (07/16/2002); KR 332189-B; KR
347737-B; TW 557356-A (10/11/2003)
“In-situ monitoring and control of conductive films by detecting changes in
induced Eddy currents,” US 6,072,313-A (06/06/2000)
“Indirect endpoint detection by chemical reaction and chemiluminescence,”
US 6,126,848-A (10/03/2000); US 6440263-B1 (08/27/2002);WO
9956972-A; WO 9956972-A1 (11/11/1999)
“Real-time detection of air-born amine in sub-parts-per-billion range,”
JP 2000304738-A (11/02/2000); KR 2001006854-A (01/26/2001); CN
1307233-A (08/08/2001); SG 97870-A1 (08/20/2003)
“Accumulator for slurry sampling,” US 6,176,765 (01/23/2001)
“Endpoint Detection by Chemical Reaction” US 6,180,422-B1
(01/30/2001); KR 347737
“Endpoint detection by chemical reaction and light scattering,” US
6,194,230-B1 (02/27/2001)
“Real-time control of chemical-mechanical polishing processes using a shaft
distortion measurement,” US 6,213,846-B1 (04/10/2001); JP
2001044158-A (02/16/2001); US 6213846-B1; CN 1280049-A
(01/17/2001); KR 2001015147-A (02/26/2001); TW 457170-A
()10/01/2001; SG 90146-A1 (07/23/2002); KR 370292-B
“Endpoint detection by chemical reaction and photoionization,” US
6,228,769-B1 (05/08/2001)
“Endpoint detection by chemical reaction and reagent,” US 6,228,280-B1
(05/08/2001)
“Real-time control of chemical-mechanical polishing processing by
monitoring ionization current,” US 6, 251,784-B1 (06/26/2001); KR
2000047928-A (06/25/2000); KR 309726-B
“Optimization of chemical mechanical process by detection of oxide/nitride
interface using CLD system,” US 6,254,453-B1 (07/03/2001); JP
2001148362-A (05/29/2001); CN 1296177-A (05/23/2001); KR
2001067203-A (07/12/2001); TW 469528-A (12/21/2001); KR 388930-B
“Optimization of CMP process by detecting of oxide/nitride interface using
IR system,” US 6,261,851 (07/17/2001); KR 2001067194-A
(07/12/2001)
“Chemical mechanical polishing endpoint process control,” US
6,276,987-B1 (08/21/2001); TW 417195-A (01/01/2001)
“Endpoint detection in chemical-mechanical polishing of cloisonnÈ
structures,” US 6,291,351-B1 (09/18/2001); GB 2365808-A
(02/27/2002); CN 1330360-A (01/09/2002); JP 2002083793-A
(03/22/2002); KR 2002017939-A (03/07/2002); SG 91930-A1
(10/15/2002); TW 490753-A; KR 403251-B
“Endpoint Detection by Chemical Reaction” US6,419,785-B1
(07/16/2002)
“Indirect endpoint detection by chemical reaction and chemiluminescence,”
US 6,440,263-B1 (08/27/2002)
“Chemiluminescence detection apparatus,” US 6,506,341-B2
(01/14/2003)
“Technique for noise reduction in a torque-based chemical-mechanical
polishing endpoint detection system,” US 6,741,913-B2 (05/25/2004)
“Enhanced endpoint detection for wet etch process,” US 2003217990-A1
(11/27/2003)
“Endpoint detection in chemical-mechanical polishing of patterned wafers
having a low pattern density,” US6835117 (12/28/2004)
“Enhanced endpoint detection for wet etch process control,” US6843880
(1/18/2005)
“Method for detecting CMP endpoint in acidic slurries” US6878629
(4/12/2005)
“Apparatus for detecting CMP endpoint in acidic slurries,” US6899784
(05/31/2005
Education
B.S.
Ph.D. 1986 Dept. of Chemistry, SUNY Stony Brook, NY, a
[Chemistry]
[Wesleyan]
Last updated: January 29, 2007 (rncb)